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Mashup Score: 16High drain field impact ionization transistors as ideal switches - 9 hour(s) ago
Nature Communications – Yuan et al. report a nearly vertical subthreshold swing field-effect transistor consists of a graphene/silicon heterojunction drain and a silicon channel. The device enables…
Source: www.nature.comCategories: General Medicine News, General HCPsTweet
Researchers from @FudanUni report a nearly hysteresis-free field-effect #transistor consists of a #graphene/#silicon heterojunction drain and a silicon channel with a subthreshold swing of 16 µV dec-1. #2Dmaterial #GettingApplied https://t.co/JPTtLXHPDS